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| MJW21195 (PNP) MJW21196 (NPN) Preferred Devices Silicon Power Transistors The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com Features * * * * * Total Harmonic Distortion Characterized High DC Current Gain - hFE = 20 Min @ IC = 8 Adc Excellent Gain Linearity High SOA: 2.25 A, 80 V, 1 Second Pb-Free Packages are Available* 16 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage - 1.5 V Collector Current Collector Current - Continuous - Peak (Note 1) Symbol VCEO VCBO VEBO VCEX IC IB PD TJ, Tstg Value 250 400 5.0 400 16 30 5.0 200 1.43 - 65 to +150 Unit Vdc Vdc Vdc Vdc Adc 1 2 3 TO-247 CASE 340L MARKING DIAGRAM Adc W W/C C MJW2119x AYWWG Base Current - Continuous Total Power Dissipation @ TC = 25C Derate Above 25C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RqJC RqJA Max 0.7 40 Unit C/W C/W x A Y WW G 1 BASE 3 EMITTER 2 COLLECTOR = 5 or 6 = Assembly Location = Year = Work Week = Pb-Free Package Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%. ORDERING INFORMATION Device MJW21195 MJW21195G MJW21196 MJW21196G *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2006 Package TO-247 TO-247 (Pb-Free) TO-247 TO-247 (Pb-Free) Shipping 30 Units/Rail 30 Units/Rail 30 Units/Rail 30 Units/Rail Preferred devices are recommended choices for future use and best overall value. 1 January, 2006 - Rev. 2 Publication Order Number: MJW21195/D MJW21195 (PNP) MJW21196 (NPN) ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) Collector Cutoff Current (VCE = 200 Vdc, IB = 0) Emitter Cutoff Current (VCE = 5 Vdc, IC = 0) Collector Cutoff Current (VCE = 250 Vdc, VBE(off) = 1.5 Vdc) SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased (VCE = 50 Vdc, t = 1 s (non-repetitive) (VCE = 80 Vdc, t = 1 s (non-repetitive) ON CHARACTERISTICS DC Current Gain (IC = 8 Adc, VCE = 5 Vdc) (IC = 16 Adc, IB = 5 Adc) Base-Emitter On Voltage (IC = 8 Adc, VCE = 5 Vdc) Collector-Emitter Saturation Voltage (IC = 8 Adc, IB = 0.8 Adc) (IC = 16 Adc, IB = 3.2 Adc) DYNAMIC CHARACTERISTICS Total Harmonic Distortion at the Output VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS (Matched pair hFE = 50 @ 5 A/5 V) Current Gain Bandwidth Product (IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) THD hFE unmatched hFE matched fT Cob - - 4 - 0.8 0.08 - - - - - 500 MHz pF % hFE 20 8 VBE(on) VCE(sat) - - - - 1.0 3 - - - - 80 - 2.0 Vdc Vdc IS/b 4.0 2.25 - - - - Adc VCEO(sus) ICEO IEBO ICEX 250 - - - - - - - - 100 50 50 Vdc mAdc mAdc mAdc Symbol Min Typical Max Unit http://onsemi.com 2 MJW21195 (PNP) MJW21196 (NPN) TYPICAL CHARACTERISTICS PNP MJW21195 F T, CURRENT BANDWIDTH PRODUCT (MHz) 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 10 TJ = 25C ftest = 1 MHz VCE = 5 V F T, CURRENT BANDWIDTH PRODUCT (MHz) 6.5 VCE = 10 V 7.5 7.0 6.5 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 NPN MJW21196 VCE = 10 V VCE = 5 V TJ = 25C ftest = 1 MHz 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 10 Figure 1. Typical Current Gain Bandwidth Product PNP MJW21195 1000 1000 Figure 2. Typical Current Gain Bandwidth Product NPN MJW21196 h FE , DC CURRENT GAIN 100 TJ = 100C 25C -25 C VCE = 20 V 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 h FE , DC CURRENT GAIN 100 TJ = 100C 25C -25 C VCE = 20 V 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 10 10 Figure 3. DC Current Gain, VCE = 20 V PNP MJW21195 1000 1000 Figure 4. DC Current Gain, VCE = 20 V NPN MJW21196 h FE , DC CURRENT GAIN 100 TJ = 100C 25C -25 C VCE = 5 V 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 h FE , DC CURRENT GAIN 100 TJ = 100C 25C -25 C VCE = 5 V 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 10 10 Figure 5. DC Current Gain, VCE = 5 V Figure 6. DC Current Gain, VCE = 5 V http://onsemi.com 3 MJW21195 (PNP) MJW21196 (NPN) TYPICAL CHARACTERISTICS PNP MJW21195 30 IC , COLLECTOR CURRENT (A) IC , COLLECTOR CURRENT (A) 25 20 15 10 5.0 0 TJ = 25C 0 5.0 10 15 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 25 2.0 A 1.5 A 1.0 A IB = 0.5 A 30 25 20 15 10 5.0 0 0 NPN MJW21196 2.0 A 1.5 A 1.0 A IB = 0.5 A TJ = 25C 5.0 10 15 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 25 Figure 7. Typical Output Characteristics PNP MJW21195 3.0 SATURATION VOLTAGE (VOLTS) 2.5 2.0 1.5 1.0 0.5 0 VCE(sat) 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 VBE(sat) SATURATION VOLTAGE (VOLTS) TJ = 25C IC/IB = 10 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.1 Figure 8. Typical Output Characteristics NPN MJW21196 TJ = 25C IC/IB = 10 VBE(sat) VCE(sat) 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 Figure 9. Typical Saturation Voltages Figure 10. Typical Saturation Voltages PNP MJW21195 VBE(on) , BASE-EMITTER VOLTAGE (VOLTS) VBE(on) , BASE-EMITTER VOLTAGE (VOLTS) 10 TJ = 25C 10 TJ = 25C NPN MJW21196 1.0 1.0 VCE = 20 V VCE = 5 V 0.1 0.1 1.0 10 100 VCE = 20 V VCE = 5 V 0.1 1.0 10 100 0.1 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 11. Typical Base-Emitter Voltage Figure 12. Typical Base-Emitter Voltage http://onsemi.com 4 MJW21195 (PNP) MJW21196 (NPN) There are two limitations on the power handling ability of a transistor; average junction temperature and secondary breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 13 is based on TJ(pk) = 150C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. TYPICAL CHARACTERISTICS PNP MJW21195 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) 100 100 NPN MJW21196 10 ms 10 1 Sec 1 100 ms 10 ms 10 1 Sec 100 ms 1 0.1 1 10 100 1000 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 0.1 1 10 100 1000 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 13. Active Region Safe Operating Area Figure 14. Active Region Safe Operating Area 10000 Cib C, CAPACITANCE (pF) C, CAPACITANCE (pF) 10000 Cib 1000 Cob TJ = 25C ftest = 1 MHz 100 0.1 1.0 10 100 1000 TJ = 25C ftest = 1 MHz 100 0.1 1.0 Cob 10 100 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 15. MJW21195 Typical Capacitance Figure 16. MJW21196 Typical Capacitance http://onsemi.com 5 MJW21195 (PNP) MJW21196 (NPN) 1.2 1.1 T , TOTAL HARMONIC HD DISTORTION (%) 1.0 0.9 0.8 0.7 0.6 10 100 1000 FREQUENCY (Hz) 10000 100000 Figure 17. Typical Total Harmonic Distortion +50 V AUDIO PRECISION MODEL ONE PLUS TOTAL HARMONIC DISTORTION ANALYZER SOURCE AMPLIFIER 50 W DUT 0.5 W 0.5 W DUT 8.0 W -50 V Figure 18. Total Harmonic Distortion Test Circuit http://onsemi.com 6 MJW21195 (PNP) MJW21196 (NPN) PACKAGE DIMENSIONS TO-247 PSI CASE 340L-02 ISSUE D -T- C -B- U N A 1 2 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS MIN MAX 20.32 21.08 15.75 16.26 4.70 5.30 1.00 1.40 2.20 2.60 1.65 2.13 5.45 BSC 1.50 2.49 0.40 0.80 20.06 20.83 5.40 6.20 4.32 5.49 --- 4.50 3.55 3.65 6.15 BSC 2.87 3.12 INCHES MIN MAX 0.800 8.30 0.620 0.640 0.185 0.209 0.040 0.055 0.087 0.102 0.065 0.084 0.215 BSC 0.059 0.098 0.016 0.031 0.790 0.820 0.212 0.244 0.170 0.216 --- 0.177 0.140 0.144 0.242 BSC 0.113 0.123 E L 4 DIM A B C D E F G H J K L N P Q U W -Q- P -Y- 0.63 (0.025) M TB M K W F 2 PL G D 3 PL 0.25 (0.010) M J H YQ S ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 7 MJW21195/D |
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